DRY ETCHING METHOD AND DRY ETCHING APPARATUS USING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve etching rate in uniformity within the surface of a substrate in an etching process of removing an oxide film from the substrate. SOLUTION: An insulating plate 3a is provided on a lower electrode 3 inside a processing chamber 2, and a through-hole 3b is bored in the lower electrode in the direction of the thickness. An SOI substrate 20 is disposed on the lower electrode 3, an etching gas is introduced into the processing chamber 2, and a high-frequency power is applied to the lower electrode 3 to dry-etch an oxide film in a dry etching process, and a conductive member 13 is brought into contact with the SOI substrate 20 via the through-hole 3b, so as to discharge static electricity from the SOI substrate that is electrically charged in dry etching in destaticization process. These two processes are carried out repeatedly.