发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To manufacture a liquid crystal display which has a high degree of integration of TFT and has a satisfactory productivity and high reliability by efficiently gettering elements of a catalyst for accelerating the crystallization of an amorphous silicon film from a channel region. SOLUTION: The liquid crystal display can be manufactured by combining formation of a gettering sink outside a p-channel type TFT region and a process of self-alignedly removing a part of a region, where the elements of a catalyst are gettered that is located outside the TFT region, by a source interconnection or drain interconnection.
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申请公布号 |
JP2001352073(A) |
申请公布日期 |
2001.12.21 |
申请号 |
JP20010091569 |
申请日期 |
2001.03.28 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD;SHARP CORP |
发明人 |
NAKAJIMA SETSUO;MAKITA NAOKI |
分类号 |
H01L21/3205;H01L21/20;H01L21/322;H01L21/336;H01L21/8238;H01L23/52;H01L27/08;H01L27/092;H01L29/786;(IPC1-7):H01L29/786;H01L21/320;H01L21/823 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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