发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To manufacture a liquid crystal display which has a high degree of integration of TFT and has a satisfactory productivity and high reliability by efficiently gettering elements of a catalyst for accelerating the crystallization of an amorphous silicon film from a channel region. SOLUTION: The liquid crystal display can be manufactured by combining formation of a gettering sink outside a p-channel type TFT region and a process of self-alignedly removing a part of a region, where the elements of a catalyst are gettered that is located outside the TFT region, by a source interconnection or drain interconnection.
申请公布号 JP2001352073(A) 申请公布日期 2001.12.21
申请号 JP20010091569 申请日期 2001.03.28
申请人 SEMICONDUCTOR ENERGY LAB CO LTD;SHARP CORP 发明人 NAKAJIMA SETSUO;MAKITA NAOKI
分类号 H01L21/3205;H01L21/20;H01L21/322;H01L21/336;H01L21/8238;H01L23/52;H01L27/08;H01L27/092;H01L29/786;(IPC1-7):H01L29/786;H01L21/320;H01L21/823 主分类号 H01L21/3205
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