| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device and a method for manufacturing the same, capable of conducting a high speed operation by reducing an interface contact resistance between a high melting point metal layer and a silicon layer, in a laminated gate electrode and wiring structure of the high melting point metal layer, a metal barrier layer and the silicon layer. SOLUTION: An element 11, such as a titanium or the like, having an oxide generating free energy which is negative and having absolute value larger than those of a high melting point metal, is introduced as an oxygen capturing substance on a surface of a high melting point metal layer 10 for constituting the laminated gate electrode and wiring or in the high melting point metal layer, so that the element 11 captures an impurity oxygen externally invaded or diffused in the surface of the high melting point metal layer 10 during a heat treating step, to prevent a segregation of the impurity oxygen in an interface between the layer 10 and the silicon layer 6 (7, 8).
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