| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which a thin silicon film containing a large amount of metal can be worked in a good shape without generating etch residues. SOLUTION: When a silicon area 6B containing a large amount of metal is etched by performing plasma etching using a mixed gas of HBr gas and Cl2 gas, superior anisotropy is secured, because reaction products, etc., deposit and form side-wall protective films 8 on the side walls of a resist mask and the thin silicon film 10. In addition, the protective films 8 maintain the shape of the film 10 at the time of removing etching residues 9 by performing plasma etching using a mixed gas of CF4 gas and O2 gas after the silicon area 6B is etched.
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