| 发明名称 |
METHOD AND APPARATUS OF SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to stabilize TFT characteristics. SOLUTION: After periodical cleaning, electric discharge is performed with a mixed gas of H2 and Ar without the substrate in a deposition system. After that, the film quality is made stable, and the TFT with satisfactory characteristics can be obtained from the first stage of cleaning.
|
| 申请公布号 |
JP2001351867(A) |
申请公布日期 |
2001.12.21 |
| 申请号 |
JP20000170116 |
申请日期 |
2000.06.07 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
HONDA KOICHI;TOKUNAGA SHINJI;FUTAMURA SHINJI;TAKEZAWA HIROYOSHI |
| 分类号 |
C23C16/02;C23C16/24;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):H01L21/205;H01L21/306 |
主分类号 |
C23C16/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
