发明名称 SEMICONDUCTOR DEVICE AND HYBRID INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To achieve similar effect as in the adoption of a multilayer substrate, since packaging substrates adopt the multilayer substrate to compose a circuit although there is a hybrid integrated circuit device, where a circuit device is packaged on a printed circuit board, a ceramic substrate, a flexible sheet, or the like. SOLUTION: Insulation covering RF is adopted on the back surface of a semiconductor device 53, and a conductive path 51 is allowed to dent or project, thus extending a wiring 21B on a packaging substrate 10 on the back surface of the semiconductor device, and hence achieving the similar effect as the case, where the packaging substrate is made multilayered equivalently by the conductive path of the semiconductor 53 and metal small-gauge wire.
申请公布号 JP2001352010(A) 申请公布日期 2001.12.21
申请号 JP20000172532 申请日期 2000.06.08
申请人 SANYO ELECTRIC CO LTD 发明人 SAKAMOTO NORIAKI;KOBAYASHI YOSHIYUKI;MAEHARA EIJU;SAKAI NORIHIRO;TAKAGISHI HITOSHI;TAKAHASHI YUKITSUGU;KUSANO KAZUHISA
分类号 H01L23/28;H01L23/12;H01L23/14;H01L23/50;H01L23/538;H01L25/04;H01L25/18 主分类号 H01L23/28
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