| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for easily forming a silicon film which can form an element, having an optical forbidden band width controlled to a low level, exhibiting high light sensitivity and high light-fastness deterioration by absorbing visible light effectively and exhibiting high energy conversion efficiency, when it is applied to a photovoltaic element. SOLUTION: A reaction gas, containing a silane-based compound having a halogen atom, e.g. dichlorosilane, in which the ratio of the number of halogen atoms and hydrogen atoms (number of halogen atoms/number of hydrogen atoms) existing in the reaction gas is in the range of 0.002-50 is fed into a reaction chamber sustained in vacuum state. High-frequency power is then applied to a high-frequency applying coil disposed in the reaction chamber of an the outside thereof in order to generate reaction gas plasma, thus forming a silicon film on the surface of a backing material disposed in the reaction chamber and heated at 150-550 deg.C. A silicon film, containing 0.005-5 atm.% of halogen atom, 0.01-15 atm.% of hydrogen atom and having an optical forbidden band width of 1.55-1.75 eV is thereby obtained.</p> |
