发明名称 SOLID-STATE IMAGE PICKUP ELEMENT
摘要 PROBLEM TO BE SOLVED: To solve the problem the conventional image pickup elements that a reproduced image has a low S/N ratio, when a change amount of a storage charge is lower than that of an output signal by a noise due to a small change in a storage charge amount to a change of an incident light amount in a saturated region. SOLUTION: A heavily-doped region 101, having a impurity concentration higher than that of another region, is partly formed at a semiconductor substrate 500 side of the photoelectric converter 502. Thus, a coupling capacity C51 of a P--type well 501 to the converter 502 is increased, and the change amount of the storage charge is increased.
申请公布号 JP2001352052(A) 申请公布日期 2001.12.21
申请号 JP20000170965 申请日期 2000.06.07
申请人 NEC CORP 发明人 KAWAI SHINICHI
分类号 H01L27/148;H01L27/146;H01L31/10;H04N5/335;H04N5/355;H04N5/369;H04N5/3722;H04N5/3725;H04N5/3728;H04N5/374;(IPC1-7):H01L27/148 主分类号 H01L27/148
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