MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce decrease in driven capacity as much as possible by preventing the thickness of the gate oxide film of a PMOSFET from increasing more than necessary. SOLUTION: After fluorine ions are injected into a region for forming a PMOSFET with a high threshold and a region for forming an NMOSFET under different injection conditions, a gate oxide film 16 is formed, thus making thinner the gate oxide film in the PMOSFET with a high threshold than that in the NMOSFET with a high threshold.