| 摘要 |
<p>The invention relates to novel doting pastes on the basis of boron, phosphorous or boron-aluminum for producing p, p+ and n, n+ zones in monocrystalline and polycrystalline Si wafers. The invention further relates to the use of corresponding pastes as masking pastes in the production of semiconductors, in power electronics or in photovoltaic applications.</p> |
