| 摘要 |
The invention concerns a method for manufacturing a solid single crystal of a material which is electrically conductive in the molten state, by pulling from a molten mass of this material, the material presenting atom clusters at melt, the method including: a melt stage so as to obtain said molten mass, the melt stage procuring a colder zone of the molten mass, from which the single crystal will be pulled, and a hotter zone having sufficient temperature to melt the atom clusters, a stage of application to the molten mass of a rotating magnetic field allowing the atom clusters to be displaced from the colder zone to the hotter zone, a stage of growth by pulling of the single crystal after the atom clusters have been displaced from the colder zone to the hotter zone.
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