| 摘要 |
<p>A multi-finger electrostatic discharge (ESD) protection circuit has at least two first resistive channels (RS1, RS2) defining input fingers. At least two field effect transistors (908, 906), each having a drain and source are connected to corresponding ones of the at least two input fingers. The gate terminals of at least one of the at least two FETs are configured to be biased by an ESD potential applied to the drain electrodes to reduce the turn-on potential of the ESD device. At least two second resistive channels are connected between a corresponding one of the source terminals of the at least two FETs and a circuit return path.</p> |
