发明名称 THICK SINGLE CRYSTAL DIAMOND LAYER METHOD FOR MAKING IT AND GEMSTONES PRODUCED FROM THE LAYER
摘要 A layer of single crystal CVD diamond of high quality having a thickness greater than 2 mm. Also provided is a method of producing such a CVD diamond layer. The method involves the homoepitaxial growth of the diamond layer on a low defect density substrate in an atmosphere containing less than 300ppb nitrogen. Gemstones can be manufactured from the layer.
申请公布号 WO0196634(A1) 申请公布日期 2001.12.20
申请号 WO2001IB01040 申请日期 2001.06.14
申请人 DE BEERS INDUSTRIAL DIAMONDS (PROPRIETARY) LIMITED;SCARSBROOK, GEOFFREY, ALAN;MARTINEAU, PHILIP, MAURICE;DORN, BAERBEL, SUSANNE, CHARLOTTE;COOPER, ANDREW, MICHAEL;COLLINS, JOHN, LLOYD;WHITEHEAD, ANDREW, JOHN;TWITCHEN, DANIEL, JAMES 发明人 SCARSBROOK, GEOFFREY, ALAN;MARTINEAU, PHILIP, MAURICE;DORN, BAERBEL, SUSANNE, CHARLOTTE;COOPER, ANDREW, MICHAEL;COLLINS, JOHN, LLOYD;WHITEHEAD, ANDREW, JOHN;TWITCHEN, DANIEL, JAMES
分类号 A44C17/00;C23C16/27;C30B25/02;C30B25/10;C30B25/18;C30B29/04;H01L21/205;H01L21/3065;(IPC1-7):C30B25/02;C30B33/00;C30B25/20 主分类号 A44C17/00
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