发明名称 |
Method of forming metal oxide gate structures and capacitor electrodes |
摘要 |
An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (step 118 of FIG. 1) that remains substantially conductive after it is oxidized; forming an electrically insulative layer (step 116 of FIG. 1) between the second structure and the conductive structure; and oxidizing the conductive structure by subjecting it to an ozone containing atmosphere for a duration of time and at a first temperature.
|
申请公布号 |
US2001053593(A1) |
申请公布日期 |
2001.12.20 |
申请号 |
US20010870631 |
申请日期 |
2001.06.01 |
申请人 |
WILK GLEN D.;WALLACE ROBERT M.;ANTHONY JOHN M.;MCINTYRE PAUL |
发明人 |
WILK GLEN D.;WALLACE ROBERT M.;ANTHONY JOHN M.;MCINTYRE PAUL |
分类号 |
G01N21/55;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
G01N21/55 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|