发明名称 Method of forming metal oxide gate structures and capacitor electrodes
摘要 An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (step 118 of FIG. 1) that remains substantially conductive after it is oxidized; forming an electrically insulative layer (step 116 of FIG. 1) between the second structure and the conductive structure; and oxidizing the conductive structure by subjecting it to an ozone containing atmosphere for a duration of time and at a first temperature.
申请公布号 US2001053593(A1) 申请公布日期 2001.12.20
申请号 US20010870631 申请日期 2001.06.01
申请人 WILK GLEN D.;WALLACE ROBERT M.;ANTHONY JOHN M.;MCINTYRE PAUL 发明人 WILK GLEN D.;WALLACE ROBERT M.;ANTHONY JOHN M.;MCINTYRE PAUL
分类号 G01N21/55;(IPC1-7):H01L21/320;H01L21/476 主分类号 G01N21/55
代理机构 代理人
主权项
地址