| 摘要 |
<p>The invention concerns a method which consists in successively using a radiation-sensitive resin layer at sites (4') designed to form large semiconductor patterns in a still intact layer (2), beneath at least a hard mask (3'), then a resin layer sensitive to particle bombardment (6) above the fine patterns to be formed in that same layer (2) which can be juxtaposed with the former. The first resin patterns are collectively and rapidly exposed by an exposure, while the electron bombardment enables to form fine patterns with great accuracy. Another hard mask (9) has been deposited before (6) the second resin (6) and forms flanks (10) around the large patterns, protecting them from lateral attacks during etching.</p> |
