发明名称 |
METHOD OF REMOVING POLYMER RESIDUES AFTER TUNGSTEN ETCH BACK |
摘要 |
The invention describes a method for lowering particle count after tungsten etch back, in which method a plasma ashing step is performed after a brush cleaning step to eliminate polymer residues that remain on the metal barrier layer after tungsten etch back. Another tungsten etch back process is further performed to remove a tungsten oxide film that is formed by reacting the tungsten layer with an O2 gas used in the plasma ashing step.
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申请公布号 |
US2001053611(A1) |
申请公布日期 |
2001.12.20 |
申请号 |
US19990455006 |
申请日期 |
1999.12.03 |
申请人 |
WANG HSUEH-WEN;LIU TSAN-WEN |
发明人 |
WANG HSUEH-WEN;LIU TSAN-WEN |
分类号 |
H01L21/02;H01L21/306;H01L21/311;H01L21/768;(IPC1-7):H01L21/461;H01L21/302 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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