Zirconium precursors for use in depositing thin films of or containing zirconium oxide using an MOCVD technique have the following general formula: Zr x (OR) y L z wherein R is an alkyl group; L is a beta-diketonate group; x = 1 or 2; y = 2, 4 or 6; and z = 1 or 2.
申请公布号
KR20010112539(A)
申请公布日期
2001.12.20
申请号
KR20000031350
申请日期
2000.06.08
申请人
CHOI, BUM YOUNG;KIM, DONG JU;KIM, SEONG HUN;LEE, SANG SUK;SHIN, JAE OK
发明人
CHOI, BUM YOUNG;KIM, DONG JU;KIM, SEONG HUN;LEE, SANG SUK;SHIN, JAE OK
