Process for forming photoresist pattern by using gas phase amine treatment

摘要

The present invention provides a process for producing a photoresist pattern. In particular, the present invention provides a process for forming a photoresist pattern which reduces or prevents poor quality photoresist patterns formation, especially when a high light absorbing (i.e., low transmittance) photoresist resin is used. In one aspect of the present invention, a photoresist film which has been exposed to light is treated with a gas phase basic compound to produce a substantially vertical photoresist pattern.