| 发明名称 |
INTERFEROMETRIC METHOD FOR ENDPOINTING PLASMA ETCH PROCESSES |
| 摘要 |
A method for monitoring a device fabrication process. The method includes etching into a wafer disposed inside a chamber and detecting the intensity of a portion of a light reflected from a surface of the wafer and further scattered at a scattering inside surface of the chamber. |
| 申请公布号 |
WO0124255(A3) |
申请公布日期 |
2001.12.20 |
| 申请号 |
WO2000US26600 |
申请日期 |
2000.09.27 |
| 申请人 |
LAM RESEARCH CORPORATION |
发明人 |
HOWALD, ARTHUR, M. |
| 分类号 |
H01L21/302;H01J37/32;H01L21/3065;H01L21/66 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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