发明名称 |
Sinterkörper aus Aluminiumnitrid, Verfahren zum Herstellen desselben, und denselben enthaltendes Halbleitersubstrat |
摘要 |
An aluminum-nitride sintered body that has both high thermal conductivity and high mechanical strength, a fabricating method for the same, and a semiconductor substrate comprising the same. A material powder is prepared by mixing an aluminum-nitride powder, constituting 1 to 95 wt.%, having an average particle diameter of 1.0 mu m or less obtained by chemical vapor deposition, with another type or types of aluminum-nitride powders constituting the remaining part. The material powder is sintered in a non-oxidizing atmosphere to obtain a sintered body having an average grain diameter of 2 mu m or less and a half width of the diffraction peak on the (302) plane, obtained by X-ray diffraction, of 0.24 deg. or less. Formation of a metallized layer on the sintered body yields a semiconductor substrate. |
申请公布号 |
DE69900447(D1) |
申请公布日期 |
2001.12.20 |
申请号 |
DE1999600447 |
申请日期 |
1999.05.05 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NATSUHARA, MASUHIRO;NAKATA, HIROHIKO;YUSHIO, YASUHISA;TANAKA, MOTOYUKI;NAGAO, SHUNJI;SHINKODA, AKIRA;SASAKI, KAZUTAKA |
分类号 |
C04B35/581;C04B41/51;C04B41/88;H01L23/15;H05K1/03;(IPC1-7):C04B35/581 |
主分类号 |
C04B35/581 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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