SEMICONDUCTOR INTEGRATED CIRCUIT FOR PREVENTING NOISE,申请号KR20000032702-传众专利搜索

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发明名称	SEMICONDUCTOR INTEGRATED CIRCUIT FOR PREVENTING NOISE
摘要
申请公布号	KR20010111923(A)	申请公布日期	2001.12.20
申请号	KR20000032702	申请日期	2000.06.14
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	LIM, SEONG MIN
分类号	(IPC1-7):H01L27/04	主分类号	(IPC1-7):H01L27/04
代理机构		代理人
主权项
地址

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