发明名称 DRAM capacitor formulation using a double-sided electrode
摘要 A capacitor having a double sided electrode for enhanced capacitance. In one embodiment, the double sided electrode capacitor is a stacked container capacitor used in a dynamic random access memory circuit. The double sided electrode is preferably formed of a conductive metal, provided that an oxide of the metal is conductive. The double sided electrode capacitor provides a capacitor that has high storage capacitance which provides an increased efficiency for a cell without an increase in the size of the cell.
申请公布号 US2001053576(A1) 申请公布日期 2001.12.20
申请号 US20010930961 申请日期 2001.08.17
申请人 DEBOER SCOTT J.;AL-SHAREEF HUSAM;THAKUR RANDHIR 发明人 DEBOER SCOTT J.;AL-SHAREEF HUSAM;THAKUR RANDHIR
分类号 H01L21/02;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824;H01L21/823;H01L21/824 主分类号 H01L21/02
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