发明名称 METHOD FOR MANUFACTURING A MAGNETRORESISTIVE ELEMENT WITH CONDUCTIVE FILMS AND MAGNETIC DOMAIN FILMS OVERLAPPING A CENTRAL ACTIVE AREA
摘要 The present invention is directed to an MR element and a thin film magnetic head that do not cause an increase in the electrical resistance value due to the presence of dead zones. When forming passive areas that include magnetic domain control films and conductive films at the two sides of a central active area through a vacuum film formation method, the magnetic domain control films are formed under film forming conditions that are different from the film forming conditions under which the conductive films are formed to ensure that the degree to which the conductive films overlap the central active area is set larger than the degree to which the magnetic domain control films overlap the central active area.
申请公布号 US2001053043(A1) 申请公布日期 2001.12.20
申请号 US20000481939 申请日期 2000.01.13
申请人 KANAZAWA KIYOSUMI;NAKAGAWA YOSHIRO 发明人 KANAZAWA KIYOSUMI;NAKAGAWA YOSHIRO
分类号 G11B5/012;G11B5/31;G11B5/39;H01L43/08;(IPC1-7):G11B5/127;C23C14/34;G11B5/33 主分类号 G11B5/012
代理机构 代理人
主权项
地址