发明名称 |
Chemical vapor deposition method for amorphous silicon |
摘要 |
<p>Method of depositing a layer of amorphous silicon film on a substrate at a very fast deposition rate while maintaining superior film quality. A plasma volume in a process chamber is defined. A total flow rate of a mixture of gases introduced into the chamber is also defined. The total flow rate is the sum of the flow rates of the respective gases in the mixture. Next, a process parameter that includes the plasma volume and total flow rate is defined. The process parameter is then maintained in a first predetermined relationship with a predetermined value during the deposition of the amorphous silicon film. <IMAGE></p> |
申请公布号 |
EP1164206(A2) |
申请公布日期 |
2001.12.19 |
申请号 |
EP20010108183 |
申请日期 |
2001.03.30 |
申请人 |
AGILENT TECHNOLOGIES, INC. (A DELAWARE CORPORATION) |
发明人 |
THEIL, JEREMY A.;KOOI, GERRIT J.;VARGHESE, RONNIE P. |
分类号 |
C23C16/24;C23C16/44;C23C16/50;C23C16/52;H01L21/205;H01L31/0376;H01L31/04;H01L31/20;(IPC1-7):C23C16/24 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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