发明名称 |
Method of forming a fluoro-organosilicate layer on a substrate |
摘要 |
<p>A method of forming an integrated circuit using a fluoro-organosilicate layer is disclosed. The fluoro-organosilicate layer is formed by applying an electric field to a gas mixture comprising a fluoro-organosilane compound and an oxidizing gas. The fluoro-organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the fluoro-organosilicate layer is used as a hardmask. In another integrated circuit fabrication process, the fluoro-organosilicate layer is incorporated into a damascene structure. <IMAGE></p> |
申请公布号 |
EP1164632(A2) |
申请公布日期 |
2001.12.19 |
申请号 |
EP20010112909 |
申请日期 |
2001.06.05 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
BARNES, MICHAEL;M'SAAD, HICHEM;NGUYEN, HUONG THANH;MOGHADAM, FARHAD |
分类号 |
C23C16/30;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/316;C23C16/40 |
主分类号 |
C23C16/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|