| 摘要 |
<p>A photo-resist having a predetermined pattern is formed on a top surface of a Pt layer. Next, the Pt layer is dry-etched by using a mixture of Cl2 and Ar as an etching gas. In this case, etching by-products are deposited on both side surfaces of the photo-resist and the Pt layer is shaped into an electrode. Then, the photo-resist which has become unnecessary after the Pt layer is dry etched is ashed and stripped by oxygen plasma. A Si substrate on which the etching by-products are deposited is soaked in a mixing solution composed of acetoacetylacetone, ammonia and DI water. The etching by-products are easily dissolved and removed. <IMAGE> <IMAGE> <IMAGE> <IMAGE></p> |
