发明名称 |
RF-effekttransistor med kollektor upp |
摘要 |
A method for manufacturing a low voltage high frequency silicon power transistor applying epitaxial mesa structure using a minimized number of masks has a highly doped silicon n++ substrate forming the emitter. Also a low voltage high frequency silicon transistor chip presenting an epitaxial mesa technology silicon power device is presented. The silicon transistor layout presents a collector-up device with a number of single mesa collector structures. The transistor operates with its substrate as a down facing emitter, and base and collector areas together with bonding pads facing up, whereby the parasitic base-to-collector capacitance is almost entirely eliminated with the emitter as substrate. The reduced number of necessary fabrication process steps of this new structure is outlined. |
申请公布号 |
SE516338(C2) |
申请公布日期 |
2001.12.17 |
申请号 |
SE19990002005 |
申请日期 |
1999.05.31 |
申请人 |
TELEFONAKTIEBOLAGET L M ERICSSON |
发明人 |
TED *JOHANSSON |
分类号 |
H01L29/417;H01L21/331;H01L29/737;(IPC1-7):H01L21/331;H01L29/70;H01L29/06 |
主分类号 |
H01L29/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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