| 摘要 |
PROBLEM TO BE SOLVED: To provide a new structure which can improve the characteristic for distributing luminous intensity of a light emitting element using the rear surface of a substrate composed of a gallium nitride compound semiconductor on which a laminated structure containing a light emitting layer is not formed as its main light emitting surface immediately above the element and, at the same time, can maintain the luminous intensity of the element at a high level. SOLUTION: The characteristic for distributing luminous intensity of the light emitting element immediately above the element can be made uniform by making the electrode to be arranged on the main light emitting surface of the element unnecessary, by providing a laminated structure of an n-type layer 2 composed of a gallium nitride compound semiconductor, the light emitting layer 4, and a p-type layer 6 on the substrate 1 composed of the n-type gallium nitride-based compound semiconductor, and by providing an n-side electrode in contact with the surface of the n-type layer 2 which is exposed by partially removing the layer 2 from the surface side of the laminated structure. |
