METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR PRODUCING SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus capable of manufacturing a semiconductor device at a low cost with good step coverage. SOLUTION: Using an apparatus having one reaction chamber 4 which can contain a substrate 1, a port 5 for supplying the reaction chamber 4 with a material gas for forming a ruthenium film or a ruthenium oxide film on the substrate 1, and a port 6 for discharging the material gas from the reaction chamber 4, a material gas is fed from the gas supply port 5 toward the substrate 1 and a ruthenium film or a ruthenium oxide film is formed on the substrate 1 by thermal CVD. Subsequently, the ruthenium film or the ruthenium oxide film is used as an underlying layer for forming a thicker ruthenium film or a ruthenium oxide film by thermal CVD under different filming conditions.