| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent an excessive voltage and the like from being applied to an electronic circuit and the like and to enhance the durability and reliability of a semiconductor device. SOLUTION: A semiconductor device is constituted in a structure that semiconductor regions 3A, 3B, and 3C separated into a trench type insulating region 4 are formed on the surface of a silicon support substrate 1 via a dielectric film 2. A MOSFET 5, which is used as an electronic circuit, and a resistor 7 are formed on the region 3A. The substrate 1 is mounted on a package 10 and is connected with a land 11 on the package 10. A pad electrode 8 on the end on one side of the ends of the resistor 7 is connected with the land 11 and a terminal 13, a pad electrode 9 on the side of the other end of the resistor 7 is connected with a terminal 14, and a gate electrode 5C which forms an input terminal of an electronic circuit is connected with a terminal 15. As a result, even though device electrostatic discharge out of charged device is generated, a discharge current can be limited by the resistor 7.</p> |
