| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for chemical mechanical polishing in which polishing time is shortened. SOLUTION: The chemical mechanical polishing method comprises a step for removing a film deposited on a substrate entirely or partially by etching, and a step for polishing the substrate chemically and mechanically following to the etching step. The etching step may comprise a step for turning the substrate and liquid for etching the film is typically fed continuously onto the surface of the rotating substrate.
|
