发明名称 |
MANUFACTURING METHOD OF SHADOW MASK |
摘要 |
PROBLEM TO BE SOLVED: To provide a shadow mask which is superior in a mask strength after forming by suppressing the etching in the side direction of more than necessary in the manufacturing of a highly precise shadow mask. SOLUTION: By adjusting a film thickness of a photoresist film in a process to form the photoresist film on both faces of shadow mask base material, the proportion of etching amount in the lateral direction against that in the depth direction which is parallel to a surface of the etching process is adjusted. It is desirable that the film thickness of the photoresist film at a large hole forming face side of shadow mask base material is made to be thicker than that of the small hole forming face side. In the concrete, it is desirable to make the film thickness 3 to 25μm at the small hole forming surface side and 5 to 50μm at the large hole forming face side.
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申请公布号 |
JP2001345046(A) |
申请公布日期 |
2001.12.14 |
申请号 |
JP20000163757 |
申请日期 |
2000.05.31 |
申请人 |
TOSHIBA CORP |
发明人 |
HIRAHARA SACHIKO;NIKAIDO MASARU |
分类号 |
C23F1/00;H01J9/14;(IPC1-7):H01J9/14 |
主分类号 |
C23F1/00 |
代理机构 |
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地址 |
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