发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS OF SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which does not need an elaborate designation of a gas mixing chamber, and to provide a manufacturing apparatus of a semiconductor. SOLUTION: The manufacturing apparatus for a semiconductor comprises; connecting a piping 4 for supplying a raw material gas of ruthenium which was vaporized from a liquid raw material of ruthenium, to a piping 5 for supplying a gas including oxygen at upstream of the gas mixing chamber 6, to mix the raw material gas of ruthenium and the gas including oxygen atoms (for example, oxygen (O2) or ozone (O3)) ahead of their approach to the gas mixing chamber 6.
申请公布号 JP2001342570(A) 申请公布日期 2001.12.14
申请号 JP20010061124 申请日期 2001.03.06
申请人 HITACHI KOKUSAI ELECTRIC INC;HITACHI LTD 发明人 KYODA MASAYUKI;ITAYA HIDEJI
分类号 C23C16/455;C23C16/18;C23C16/40;C23C16/44;H01L21/00;H01L21/205;H01L21/28;H01L21/285;H01L21/31;H01L21/8242;H01L27/108 主分类号 C23C16/455
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