SEMICONDUCTOR DEVICE PROVIDED WITH BUILT-IN ELECTROSTATIC PROTECTIVE CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a built-in electrostatic protective circuit which can avoid a current which passes through a silicide layer to concentrate on a hot spot. SOLUTION: A semiconductor device is constiututed in a structure that a salicide N-MOS transistor 110 isolated from other MOS transistor in a first diffused region is provided on a semiconductor substrate 100. A drain of the transistor 110 is separated from the transistor 110 by a second element isolation region 140 as an electrostatic protective circuit of this transistor 110, and first and second N-type diffused regions 114 and 150 are formed in the substrate 100. A pad 170 is connected with the region 150 via a contact 152. A static charge which is injected in the substrate 100 via the pad 170 is chiefly discharged through a first discharge route 190, and a second discharge route 192 which goes via a silicide layer 130 little functions as a discharge route as the contact resistance value between the layer 130 and the region 114 is higher than the resistance value of the region 114.