| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a defect-correcting technique of high transmittance and satisfactory phase controllability, in order to provide a phase shift mask consisting of ruggedness of glass or quartz with high-quality defect correction. SOLUTION: The introduction of gaseous iodine into the device through a valve 13 is made possible, and the conditions under which the transmittance of a processing region is high, and an etching rate is low are selected for the irradiation conditions of an ion beam 2 under a gaseous iodine atmosphere. The degradation in the throughput accompanying degradation in the etching rate is dealt with, by combining the method described above and a processing method of the high etching rate.</p> |
