FORMATION METHOD OF SILICON-BASED THIN FILM, SILICON-BASED THIN FILM, AND PHOTOVOLTAIC ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a silicon thin film having excellent photoelectric characteristics at film formation speed that is at a practical use level industrially, the silicon thin film, and a photovoltaic element. SOLUTION: In the frequency plasma CVD method using a gas containing halogenated silicon and hydrogen, when high-frequency power P0 (W), high-frequency introduction part area S (cm2), distance (d) (cm) between the high-frequency introduction part and a substrate, and pressure PR (mToor) are expressed by Q=P0×PR/S/d, the value of the W should be set to 50 or more.