发明名称 FILM FORMING METHOD BY SPUTTERING AND MANUFACTURING METHOD OF PHOTOVOLTAIC DEVICE THEREWITH
摘要 <p>PROBLEM TO BE SOLVED: To provide a film forming method by sputtering in which a film, in particular a reflection film having a desired reflectivity is stably formed by sputtering over a long time, having a superior workability, durability and a high photoelectric conversion efficiency, and to provide a manufacturing method of a photovoltaic device by using the film. SOLUTION: The film forming method by sputtering which forms a film on a substrate by introducing a sputtering gas in a film forming room, includes forming a reflection layer having a predetermined reflectivity on the above substrate, by adjusting a H2O partial pressure in the atmosphere in the above film forming room to a predetermined condition.</p>
申请公布号 JP2001342555(A) 申请公布日期 2001.12.14
申请号 JP20000164654 申请日期 2000.06.01
申请人 CANON INC 发明人 NAKAYAMA AKIYA
分类号 C23C14/06;C23C14/08;C23C14/14;C23C14/34;C23C14/54;C23C14/56;H01B13/00;H01L31/0392;H01L31/04;H01L31/052;H01L31/18;(IPC1-7):C23C14/06 主分类号 C23C14/06
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