| 摘要 |
<p>PROBLEM TO BE SOLVED: To guarantee high speed and stable read-out operation by following the variation of column addresses and the variation of read-out data and minimizing always delay of speed of read-out data. SOLUTION: In a semiconductor memory of a virtual ground system using a flat cell, the device is provided with a Y selector circuit 2, a virtual GND selector circuit 8, a memory cell section 7, and a reference section 6 having the same constitution, a bank selection line BS of this reference section 6, a word line W, and a GND selection line GS are made common with the memory cell section 7. In reference constitution of the reference cell section 6, all reference cells of a bank being adjacent to a referred reference cell are made off-bit cells. Even in the case in which any bank is selected, characteristics of the memory cell section and the reference cell section are made the same, and read-out characteristics do not depend on a bank.</p> |
