| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for forming a deposition film by a high-frequency plasma CVD method enabling a mass production cheap and easy. SOLUTION: The apparatus for forming the deposition film comprises a reaction vessel 1400 consisting of dielectric members, a vacuum vessel 1111 surrounding the reaction vessel 1400, a material gas supplying means 1115 being arranged in a space A in the reaction vessel 1400, a high-frequency power introduction means 1116 being arranged in a space B in the vacuum vessel 1111 excluding inside of the reaction vessel, and an oscillatory frequency of the high-frequency with 50-450 MHz. The method for forming the deposition film comprises, providing a cylindrical support 1112 in the reaction vessel 1400, supplying a material gas into the space A, and decomposing the material gas by introducing the high-frequency power from the high-frequency power introduction means 1116 arranged in the space B.
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