FORMATION METHOD OF SILICON-BASED THIN FILM, SILICON-BASED THIN FILM, AND PHOTOVOLTAIC ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide the formation method of a silicon-based thin film that can manufacture a photovoltaic element having excellent photoelectric conversion efficiency, coherency, and a superior environment-resistance property by greatly reducing costs as compared with a conventional method, a silicon-based thin film, and a photovoltaic element. SOLUTION: In this method for forming a silicon-based thin film by using the high-frequency plasma CVD method, a feed gas should contain silicon fluoride, hydrogen, and an oxygen atom that is equal to or more than 0.1 ppm and equal to or less than 0.5 ppm to a silicon atom.