发明名称 |
Semiconductor circuit e.g. semiconductor memory includes high and low voltage sources connected selectively to conduction area of programmable element by connectors and switches |
摘要 |
The explicit high voltage source (1) and internal low voltage source (2) are selectively connected to respective connection areas (4,5) of a programmable fuse (3) by respective connectors (6,7). The switches (8,9) connect the connectors to the connection areas, when a control signal is applied to the switches from a controller (16), to apply required voltage.
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申请公布号 |
DE10026276(A1) |
申请公布日期 |
2001.12.13 |
申请号 |
DE20001026276 |
申请日期 |
2000.05.26 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
KAISER, ROBERT;LINDOLF, JUERGEN;SCHNEIDER, HELMUT;SCHAMBERGER, FLORIAN;SCHAFFROTH, THILO |
分类号 |
G11C17/18;(IPC1-7):G11C16/02;G11C17/16;G11C29/00 |
主分类号 |
G11C17/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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