SPUTTERING METHOD, APPARATUS, AND TARGET FOR REDUCED ARCING
摘要
A process, device and target for making sputtered films with a plasma, wherein sputtering employs a target having a fine grain size and a low defect concentration to reduce arcing.
申请公布号
WO0194659(A2)
申请公布日期
2001.12.13
申请号
WO2001US17338
申请日期
2001.05.29
申请人
HONEYWELL INTERNATIONAL INC.;PITCHER, PHILIP, GEORGE;YAN, ZHIHUA;KIM, JAEYEON;RUSHING, MICHAEL, ALAN
发明人
PITCHER, PHILIP, GEORGE;YAN, ZHIHUA;KIM, JAEYEON;RUSHING, MICHAEL, ALAN
