发明名称 |
Synchronous burst memory |
摘要 |
A device generally comprising a memory array and a burst sequence generator. The memory array may be configured to store data. The burst sequence generator may be configured to generate a burst sequence in response to address information received by the device. The burst sequence may be configured to identify a plurality of locations for storing data in the memory array. The device may have a maximum operating current of 50 milliamps and/or a maximum standby current of about 25 microamps.
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申请公布号 |
US2001052045(A1) |
申请公布日期 |
2001.12.13 |
申请号 |
US20010815599 |
申请日期 |
2001.03.23 |
申请人 |
CYPRESS SEMICONDUCTOR CORP. |
发明人 |
ARCOLEO MATHEW R.;MANAPAT RAJESH;HARMEL SCOTT |
分类号 |
G11C11/407;G06F12/02;G11C7/10;G11C11/401;(IPC1-7):G06F12/00 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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