发明名称 Synchronous burst memory
摘要 A device generally comprising a memory array and a burst sequence generator. The memory array may be configured to store data. The burst sequence generator may be configured to generate a burst sequence in response to address information received by the device. The burst sequence may be configured to identify a plurality of locations for storing data in the memory array. The device may have a maximum operating current of 50 milliamps and/or a maximum standby current of about 25 microamps.
申请公布号 US2001052045(A1) 申请公布日期 2001.12.13
申请号 US20010815599 申请日期 2001.03.23
申请人 CYPRESS SEMICONDUCTOR CORP. 发明人 ARCOLEO MATHEW R.;MANAPAT RAJESH;HARMEL SCOTT
分类号 G11C11/407;G06F12/02;G11C7/10;G11C11/401;(IPC1-7):G06F12/00 主分类号 G11C11/407
代理机构 代理人
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