| 摘要 |
A method of analyzing defects arising from a plurality of photoresist-based layers formed on top of a color filter array in an image sensor is provided. The method comprises the steps of: providing a sample wafer on a passivation layer on a substrate fabricated by a predetermined process, wherein the sample array comprises, sequentially layered, a color filter array, an overcoating layer and a micro-lens, each of which is made of photoresist material; immersing the sample wafer in a hydrofluoric acid solution to etch the passivation layer and expose the back side of the color filter array; and observing defects arising from the photoresist-based layers in the back side of the color filter array.
|
