| 摘要 |
An Metal Insulator Metal (MIM) capacitor having improved performance in a high frequency range. The MIM capacitor comprises: a lower electrode; a second insulating film formed on the lower electrode; a capacitor insulating film formed on a portion of the lower electrode; an upper electrode formed on the capacitor insulating film; a third insulating film formed on the second insulating film and the upper electrode; a first lead electrode which connects to a portion of the lower electrode; a second lead electrode which connects to a portion of the upper electrode. The first lead electrode is continuously formed such that the first electrode surrounds at least three sides of the capacitor insulating film, and the width H of the capacitor insulating film and maximum frequency F satisfy the formula: H<(A/F)½, where, A is a predetermined constant determined depending on a structure and manufacturing process of the MIM capacitor to obtain desired admittance characteristics.
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