| 摘要 |
The invention provides a semiconductor pressure sensor which has excellent electrical insulation (17) between the support means of the semiconductor pressure sensor and the semiconductor substrate (31), the semiconductor pressure sensor essentially containing a semiconductor substrate (31) having a first semiconductor region in which at least one semiconductor device is formed, a second semiconductor region and an insulated layer (17) which is buried (sunk) between the first (30) and second semiconductor regions, an impression which is provided in the second semiconductor region and has its opening located on the top surface of the second semiconductor region and a loading-detection part, consisting of the semiconductor device and provided in the first semiconductor device, opposite the impression. The semiconductor pressure sensor is designed so that at least one of the outer peripheral side surfaces of the first (30) and second semiconductor regions is formed on the inner side of the outer-most peripheral side surface of the insulating layer (17). <IMAGE> |
