发明名称 Three-dimensional flash memory structure and fabrication method thereof
摘要 A three-dimensional flash array structure and the fabrication method thereof. The three-dimensional flash memory array structure disclosed in the invention can be expanded volumetrically, so that a memory cell with large capacity can be manufactured in a unit area to increase the memory capacity.
申请公布号 US2001050442(A1) 申请公布日期 2001.12.13
申请号 US20010813736 申请日期 2001.03.21
申请人 LEE ROBIN 发明人 LEE ROBIN
分类号 H01L21/8247;H01L27/06;H01L27/115;H01L27/12;(IPC1-7):H01L27/11 主分类号 H01L21/8247
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