| 摘要 |
A plasma processing apparatus includes a processing chamber, processing gas supply means for supplying one or more processing gases into the processing chamber, plasma generating means for generating a plasma, a mounting stage for mounting an object to be processed, bias applying means for applying an electrical bias voltage to the mounting stage, a gas storage chamber being disposed in a position opposite to a face of the mounting stage and being provided with a supply system for supplying neutral particles or gases to generate the neutral particles, a partition plate for separating the gas storage chamber from the processing chamber and having jet holes for jetting the neutral particles into the processing chamber, and an exhaust system.
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