| 摘要 |
A semiconductor memory integrated circuit is provided, which is capable of simultaneously applying voltage stress to normal signal lines and spare signal lines, thereby reducing the time required for performing a test. The semiconductor memory integrated circuit includes a memory cell array having a plurality of normal signal lines for selecting a memory cell, a redundant cell array including three or more of odd number of spare signal lines for compensating for defectiveness in the memory cell array, a decoder for decoding an address signal to select a normal signal line, a spare decoder, which is activated when a defective address signal is inputted, for decoding the defective address signal to select a spare signal line, and a test control circuit for controlling the decoder and the spare decoder to perform a test of applying voltage between adjacent signal lines in the normal signal lines and the spare signal lines. The test control circuit sets electric potential levels in a signal line group including the normal signal lines and the spare signal lines so that at the time of a test, electric potential levels of adjacent signal lines are opposite to each other.
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