发明名称 Semiconductor device and method of manufacturing the same
摘要 When the through holes are formed in the first to the eighth insulation layers, an alignment is performed by using an alignment mark provided in the lowermost wiring layer. The alignment marks provided in the insulation layers are formed by being alternately overlapped in two areas of a scribe line having a saucer, thereby, the area occupied by the alignment marks is reduced.
申请公布号 US2001050437(A1) 申请公布日期 2001.12.13
申请号 US20010877179 申请日期 2001.06.11
申请人 SAITO HIROFUMI 发明人 SAITO HIROFUMI
分类号 G03F9/00;H01L21/027;H01L21/3205;H01L21/768;H01L23/522;H01L23/544;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 G03F9/00
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